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The ion-cutting technique, which has been applied for the mass production of SOI (silicon-on-insulator) wafers, appears to be a potential solution by transferring high-quality single-crystalline GaN films on Si(100) substrates 13. Therefore, many efforts are needed to integrate high-quality GaN on the Si(100) substrates 11, 12. In addition, the large lattice mismatch between GaN and Si (~17%) causes a high density (typically in the range of 10 9вЂ“10 10вЂ‰cm в€’2) of threading dislocations even though several micrometers thick buffer layers are used to annihilate the threading dislocations in the active layer 10.

For the heteroepitaxy growth of wurtzite GaN film, Si(111) substrate is favored for the epitaxy lattice matching instead of the widely-used Si(100) wafer in the standard IC platform. However, there are several technological hurdles need to be overcome. To realize GaN/Si heterogeneous structure, GaN films are usually grown on the Si substrates using metalorganic chemical vapor deposition (MOCVD) 6, 9. Heterogeneously integrating GaN with Si provides a hybrid platform to realize the integration of GaN high-frequency and high-power electronic devices with Si ICs (integrated circuits) as well as the monolithic on-chip light sources and nonlinear interactions for Si photonics 5, 6, 7, 8. In recent years, due to its direct and wide bandgap, high breakdown voltage, and optical nonlinearity, GaN has attracted much attention for the applications of electronic and optoelectronic devices such as high electron mobility transistors (HEMTs), laser diodes (LDs), light emitter diodes (LEDs) as well as GaN nanophotonics 1, 2, 3, 4. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process. Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated.

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The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163вЂ‰arcsec, corresponding to a density of threading dislocation of 5вЂ‰Г—вЂ‰10 7вЂ‰cm в€’2.

The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5вЂ‰eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated.